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M29DW128G
128 Mbit (8 Mb x 16, multiple bank, page, dual boot) 3 V supply Flash memory
Data Brief
Features
Supply voltage - VCC = 2.7 to 3.6 V for Program, Erase and Read - VPP =12 V for Fast Program (optional) Asynchronous Random/Page Read - Page width: 8 words - Page access: 25 ns - Random access: 60 ns Programming time - 15 s per byte/word (typical) - 32-word write buffer Erase verify Memory blocks - Quadruple bank memory array: 16 Mbit+48 Mbit+48 Mbit+16 Mbit - Parameter blocks (at top and bottom) Dual operation - While Program or Erase in one bank, Read in any of the other banks Program/Erase Suspend and Resume modes - Read from any block during Program Suspend - Read and Program another block during Erase Suspend Unlock Bypass Program - Faster production/batch programming Common Flash interface - 64 bit security code 100,000 Program/Erase cycles per block
TSOP56 (NF) 14 x 20 mm
BGA

TBGA64 (ZA) 10 x 13 mm

Low power consumption - Standby and automatic standby Hardware block protection - VPP/WP pin for fast program and write protect of the four outermost parameter blocks Security features - Standard protection - Password protection - Additional block protection Extended memory block - Extra block used as security block or to store additional information Electronic signature - Manufacturer code: 0020h - Device code: 227Eh+2220h+2200h ECOPACK(R) packages available

December 2007
Rev 2
1/11
www.numonyx.com
1
For further information contact your local STMicroelectronics sales office.
Contents
M29DW128G
Contents
1 2 3 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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M29DW128G
List of tables
List of tables
Table 1. Table 2. Table 3. Table 4. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Bank architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3/11
List of figures
M29DW128G
List of figures
Figure 1. Figure 2. Figure 3. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 TSOP connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 TBGA connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
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M29DW128G
Description
1
Description
The M29DW128G is a 128 Mbit (8 Mb x 16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. At Power-up the memory defaults to its Read mode. The M29DW128G features an asymmetrical block architecture, with 8 parameter and 62 main blocks, divided into four banks, A, B, C and D, providing multiple bank operations. While programming or erasing in one bank, read operations are possible in any other bank. The bank architecture is summarized in Table 2. Four of the parameter blocks are at the top of the memory address space, and four are at the bottom. Program and Erase commands are written to the command interface of the memory. An onchip Program/Erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. The Chip Enable, Output Enable and Write Enable signals control the bus operations of the memory. They allow simple connection to most microprocessors, often without additional logic. The device supports Asynchronous Random Read and Page Read from all blocks of the memory array. The M29DW128G has one extra 256 words block (extended block, 128 words factory locked and 128 words customer lockable) that can be accessed using a dedicated command. The extended block can be protected and so is useful for storing security information. However the protection is irreversible, once protected the protection cannot be undone. Each block can be erased independently, so it is possible to preserve valid data while old data is erased. The device features different levels of hardware and software block protection to avoid unwanted program or erase (modify):
Hardware protection: - The VPP/WP provides a hardware protection of the four outermost parameter blocks (two at the top and two at the bottom of the address space). Standard protection Password protection
Software protection - -
Additional protection features are available upon customer request.
The memory is offered in TSOP56 (14 x 20 mm) and TBGA64 (10 x 13 mm, 1 mm pitch) packages. In order to meet environmental requirements, Numonyx offers the M29DW128G in ECOPACK(R) packages. ECOPACK packages are Lead-free. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. The memory is supplied with all the bits erased (set to '1').
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Description Table 1. Signal names
Function Address inputs Data inputs/outputs Chip Enable Output Enable Write Enable Reset/Block Temporary Unprotect Ready/Busy output Supply voltage VPP/Write Protect Ground Not connected internally
M29DW128G
Signal name A0-A22 DQ0-DQ15 E G W RP RB VCC VPP/WP VSS NC
Direction Inputs I/O Input Input Input Input Output
Figure 1.
Logic diagram
VCC VPP/WP
23 A0-A22 W E G RP M29DW128G
16 DQ0-DQ15
RB
VSS
AI09208c
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M29DW128G Table 2.
Bank
Description Bank architecture
Parameter blocks Bank size N. of blocks A B C D 16 Mbit 48 Mbit 48 Mbit 16 Mbit 4 -- -- 4 Block size 64 Kbytes/ 32 Kwords -- -- 64 Kbytes/ 32 Kwords N. of blocks 7 24 24 7 Block size 256 Kbytes/ 128 Kwords 256 Kbytes/ 128 Kwords 256 Kbytes/ 128 Kwords 256 Kbytes/ 128 Kwords Main blocks
Figure 2.
TSOP connections
NC A22 A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 W RP A21 VPP/WP RB A18 A17 A7 A6 A5 A4 A3 A2 A1 NC NC
1
56
14 43 M29DW128G 15 42
NC NC A16 NC VSS DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E A0 NC VCC
28
29
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Description Figure 3. TBGA connections (top view through package)
1 2 3 4 5 6 7 8
M29DW128G
A
NC
A3
A7
RB
W
A9
A13
NC
B
NC
A4
A17
VPP/WP
RP
A8
A12
A22
C
NC
A2
A6
A18
A21
A10
A14
NC
D
NC
A1
A5
A20
A19
A11
A15
VCC
E
NC
A0
DQ0
DQ2
DQ5
DQ7
A16
VSS
F
VCC
E
DQ8
DQ10
DQ12
DQ14
NC
NC
G
NC
G
DQ9
DQ11
VCC
DQ13
DQ15
NC
H
NC
VSS
DQ1
DQ3
DQ4
DQ6
VSS
NC
AI09210c
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M29DW128G
Part numbering
2
Part numbering
Table 3.
Example:
The
Ordering information scheme
M29 D W 128G 60 NF 6 E
Device type M29
Architecture D = Dual operation
Operating voltage W = VCC = 2.7 to 3.6 V
Device function 128G = 128 Mbit (x 16), page, dual boot
Speed 60= 60 ns
Package NF = TSOP56: 14 x 20 mm ZA = TBGA64: 10 x 13 mm - 1 mm pitch
Temperature range 6 = -40 to 85 C
Option E = ECOPACK package, standard packing F = ECOPACK package, tape & reel packing
Note:
This product is also available with the extended block factory locked.
Devices are shipped from the factory with the memory content bits erased to '1'. For a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact your nearest Numonyx Sales Office.
9/11
Revision history
M29DW128G
3
Revision history
Table 4.
Date 17-Sep-2007 10-Dec-2007
Document revision history
Version 1 2 Initial release. Applied Numonyx branding. Revision details
10/11
M29DW128G
Please Read Carefully:
INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYXTM PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications. Numonyx may make changes to specifications and product descriptions at any time, without notice. Numonyx, B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights. Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Numonyx reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting Numonyx's website at http://www.numonyx.com. Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. Copyright (c) 11/5/7, Numonyx, B.V., All Rights Reserved.
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